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1 article(s) from Lunina, Marina L

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

Sergei N. Chebotarev,
Alexander S. Pashchenko,
Leonid S. Lunin,
Elena N. Zhivotova,
Georgy A. Erimeev and
Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

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Figure 1: Energy dependence and angular dependence of sputtering coefficients.

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Figure 2: The calibration of the SnTe depositon rate as a function of the evaporator temperature.

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Figure 3: Size distribution of InAs quantum dots as a function of the substrate temperature.

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Figure 4: The dependence of average dimensions and surface density of InAs nanoislands on the ion current val...

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Figure 5: Average dimensions and surface density of InAs nanoislands as a function of the ion energy.

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Figure 6: Raman scattering spectra of samples obtained at different ion energies.

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Figure 7: Doping profiles measured by C–V profiling.

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Figure 8: Photoluminescence spectra of the grown InAs/GaAs structures with different levels of doping of the ...

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Figure 9: Dark I–V characteristics of the different doped samples.

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Published 03 Jan 2017

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